| PART |
Description |
Maker |
| MX29F400BT MX29F400BTC-90 |
4M-BIT [512Kx8/256Kx16] CMOS FLASH MEMORY
|
MXIC
|
| 29F400C-55 29F400C-90 29F400C-70 |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 5V ONLY BOOT SECTOR FLASH MEMORY
|
Macronix International Co., Ltd.
|
| MX26LV400TXEC-70G MX26LV400 MX26LV400BTC-55 MX26LV |
4M-BIT [512Kx8/256Kx16] CMOS SINGLE VOLTAGE 3V ONLY BOOT SECTOR HIGH SPEED eLiteFlashTM MEMORY
|
MCNIX[Macronix International]
|
| KM23V4000DETY KM23V4000DTY |
4M-Bit (512Kx8) CMOS Mask ROM(4M(512Kx8) CMOS掩膜ROM)
|
SAMSUNG SEMICONDUCTOR CO. LTD.
|
| HY29F400ABT-50 HY29F400ABT-50I HY29F400ABT-55 HY29 |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory
|
HYNIX[Hynix Semiconductor]
|
| AT29LV040ANBSP AT29LV040A-15JC AT29LV040A-15TC |
EEPROM|FLASH|512KX8|CMOS|TSSOP|32PIN|PLASTIC 的EEPROM | FLASH动画| 512KX8 |的CMOS | TSSOP封装| 32脚|塑料
EEPROM|FLASH|512KX8|CMOS|LDCC|32PIN|PLASTIC 的EEPROM | FLASH动画| 512KX8 |的CMOS | LDCC | 32脚|塑料
4M bit, 3-Volt Read and 3-Volt Write Flash
|
Atmel, Corp.
Atmel Corp
|
| HY29F400ABG-90I HY29F400ABG-70I HY29F400ABG-50I HY |
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 256K X 16 FLASH 5V PROM, 50 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 256K X 16 FLASH 5V PROM, 70 ns, PDSO48
4 Megabit (512Kx8/256Kx16) 5 Volt-only Flash Memory 256K X 16 FLASH 5V PROM, 90 ns, PDSO48
|
HYNIX SEMICONDUCTOR INC
Hynix Semiconductor, Inc.
http://
|
| 29F004T-55 29F004T-70 29F004T-90 MX29F004TQC-12G M |
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International Co., Ltd.
|
| N04L1618C2AB2-70I N04L1618C2A N04L1618C2AB N04L161 |
4Mb Ultra-Low Power Asynchronous CMOS SRAM 256Kx16 bit
|
http://
NANOAMP[NanoAmp Solutions, Inc.]
|
| MX29F040 MX29F040TC-70 MX29F040TC-70G MX29F040TI-9 |
4M-BIT [512KX8] CMOS EQUAL SECTOR FLASH MEMORY
|
MCNIX[Macronix International]
|
| MX29F004TPC-90 29F004B-90 29F004T-70 29F004B-70 29 |
4M-BIT [512KX8] CMOS FLASH MEMORY
4M-BIT [512KX8] CMOS FLASH MEMORY
|
Macronix International
|
